IPP020N06NAKSA1

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IPP020N06NAKSA1 datasheet

• Маркировка
  IPP020N06NAKSA1
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP020N06NAKSA1 Continuous Drain Current: 120 A Drain-source Breakdown Voltage: 60 V Fall Time: 19 ns Forward Transconductance Gfs (max / Min): 210 S Gate Charge Qg: 106 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: PG-TO220-3 Power Dissipation: 214 W Resistance Drain-source Rds (on): 2 mOhms Rise Time: 45 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 51 ns RoHS: yes Drain-Source Breakdown Voltage: 60 V Resistance Drain-Source RDS (on): 2 mOhms Forward Transconductance gFS (Max / Min): 210 S Typical Turn-Off Delay Time: 51 ns
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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